Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)

Abstract

A kinetic lattice Monte Carlo model of local droplet etching of A<sup>3</sup>B<sup>5</sup> semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained. 

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Cite this paper

@article{Vasilenko2015AnalysisOG, title={Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)}, author={Maxim A. Vasilenko and Nataliya L. Shwartz}, journal={2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices}, year={2015}, pages={16-19} }