Analysis of FinFET technology on memories

  title={Analysis of FinFET technology on memories},
  author={Esteve Amat and A. Asenov and Ramon Canal and B. Cheng and J.-Ll. Cruz and Zoran Jaksic and Miguel Corbalan and Antonio Rubio and Paul Zuber},
  journal={2012 IEEE 18th International On-Line Testing Symposium (IOLTS)},
Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain… CONTINUE READING