Analysis of Dynamic Faults in Embedded-SRAMs: Implications for Memory Test

This paper presents the results of resistive-open defect insertion in different locations of Infineon 0.13 μm embedded-SRAM with the main purpose of verifying the presence of dynamic faults. This study is based on the injection of resistive defects as their presence in VDSM technologies is more and more frequent. Electrical simulations have been performed… CONTINUE READING

Topics

Statistics

01020201620172018
Citations per Year

Citation Velocity: 9

Averaging 9 citations per year over the last 3 years.

Learn more about how we calculate this metric in our FAQ.