Analysis of Current Fluctuation Due to Trap and Percolation Path in Nano-Scale Bulk FinFET.

An electron in the channel can be trapped into the trap inside gate oxide and detrapped into the channel, resulting in the fluctuation in drain current. To investigate the drain current fluctuation (ΔI(D)) caused by trapping/detrapping of an electron in 22 nm bulk FinFET, 3-D device simulation was performed extensively. The ΔI(D) is changed by changing the… CONTINUE READING