Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS

Abstract

Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Z<sub>in</sub>) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by… (More)

2 Figures and Tables

Topics

  • Presentations referencing similar topics