Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

@inproceedings{Kotani2004AnalysisAC,
  title={Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model},
  author={Junji Kotani and Tamotsu Hashizume and Hideki Hasegawa},
  year={2004}
}
Using a rigorous computer simulation program for current transport through a Schottky barrier with an arbitrary potential profile, the leakage current mechanism in GaN and AlGaN Schottky diodes was investigated on the basis of the thin surface barrier (TSB) model recently proposed by the authors’ group. Computer simulation assuming various possible defect density distributions was carried out to reproduce the measured temperature dependent current voltage (I–V)-temperature characteristics of… CONTINUE READING

Similar Papers

Citations

Publications citing this paper.
SHOWING 1-10 OF 11 CITATIONS

AlGaN Schottky Diodes for Detector Applications in the UV Wavelength Range

VIEW 5 EXCERPTS
CITES RESULTS, METHODS & BACKGROUND
HIGHLY INFLUENCED

Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage

  • IEEE Transactions on Electron Devices
  • 2005
VIEW 3 EXCERPTS
CITES BACKGROUND & METHODS
HIGHLY INFLUENCED

AlGaN Schottky diodes for detector applications in the UV wavelength range

  • MELECON 2008 - The 14th IEEE Mediterranean Electrotechnical Conference
  • 2008
VIEW 1 EXCERPT
CITES METHODS