Analysis and Test of Resistive-Open Defects in SRAM Pre-Charge Circuits

@article{Dilillo2007AnalysisAT,
  title={Analysis and Test of Resistive-Open Defects in SRAM Pre-Charge Circuits},
  author={Luigi Dilillo and Patrick Girard and Serge Pravossoudovitch and Arnaud Virazel and Magali Bastian},
  journal={J. Electronic Testing},
  year={2007},
  volume={23},
  pages={435-444}
}
In this paper, we present an exhaustive study on the influence of resistive-open defects in pre-charge circuits of SRAM memories. In SRAM memories, the pre-charge circuits operate the pre-charge and equalization at a certain voltage level, in general Vdd, of all the couples of bit lines of the memory array. This action is essential in order to ensure correct read operations. We have analyzed the impact of resistive-opens placed in different locations of these circuits. Each defect studied in… CONTINUE READING

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