An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications

@article{Kanamura2005AnO1,
  title={An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications},
  author={Masahito Kanamura and Toshihide Kikkawa and Taisuke Iwai and Kenji Imanishi and Tomohiro Kubo and Kazukiyo Joshin},
  journal={IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.},
  year={2005},
  pages={572-575}
}
Novel n-GaN/n-AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with Si3N4 film were fabricated on a semi-insulating (S.I.) SiC substrate. An n-GaN/n-AlGaN/GaN MIS-HEMT with a breakdown voltage of 400 V was obtained by using SiN/n-GaN cap structure. The single-chip GaN MIS-HEMT amplifier operated at 60 V achieves a high output power of 110 W with a linear gain of 13 dB at 2.14 GHz. This is the first report of an AlGaN/GaN MIS-HEMT with an over 100 W output… CONTINUE READING

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