# An optimized algorithm for ionized impurity scattering in Monte Carlo simulations

@article{Wenckebach2002AnOA, title={An optimized algorithm for ionized impurity scattering in Monte Carlo simulations}, author={W. Th. Wenckebach and Paul Kinsler}, journal={Computer Physics Communications}, year={2002}, volume={143}, pages={136-141} }

## 3 Citations

An improved Monte Carlo algorithm for ionized impurity scattering in bands with warping, non-parabolicity and degeneracy

- Physics2004 Abstracts 10th International Workshop on Computational Electronics
- 2004

Hole scattering with ionized impurities in semiconductors is investigated within the framework of effective mass theory and the Brooks-Herrings formalism. The present work proposes an efficient…

An Efficient Monte Carlo Procedure for Studying Hole Transport in Doped Semiconductors

- Physics
- 2004

The present work proposes an efficient technique for calculating the final state of holes after an ionized impurity scattering when the main features of the valence bands in Si and Ge, such as…

Hall effect and ionized impurity scattering in Si(1-x)Gex

- Physics
- 2003

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si(1−x)Gex is vital in order to predict the correct Hall parameters. Our results show good…

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