An in-situ temperature-sensing interface based on a SAR ADC in 45nm LP digital CMOS for the frequency-temperature compensation of crystal oscillators

@article{Wang2010AnIT,
  title={An in-situ temperature-sensing interface based on a SAR ADC in 45nm LP digital CMOS for the frequency-temperature compensation of crystal oscillators},
  author={Zhenning Wang and Richard Lin and Eshel Gordon and Hasnain Lakdawala and L. Richard Carley and Jonathan C. Jensen},
  journal={2010 IEEE International Solid-State Circuits Conference - (ISSCC)},
  year={2010},
  pages={316-317}
}
Multi-radio (3G/4G/GPS) mobile communication devices impose stringent requirements (≪1ppm) on a crystal oscillator's (XO) frequency stability over a wide temperature range (≫100°C). Furthermore, these devices often subject their internal XOs to sudden temperature ramps caused by power switching during sporadic user activities. In order for applications such as GPS to maintain satellite acquisition under such conditions, a low XO frequency drift rate with temperature (≪50ppb/°C) is strongly… CONTINUE READING