An improved forward I-V method for nonideal Schottky diodes with high series resistance

@article{Lien1984AnIF,
  title={An improved forward I-V method for nonideal Schottky diodes with high series resistance},
  author={C.-D. Lien and F.C.T. So and M A Nicolet},
  journal={IEEE Transactions on Electron Devices},
  year={1984},
  volume={31},
  pages={1502-1503}
}
Two methods are described to obtain the value of the series resistance<tex>(R)</tex>of a Schottky diode from its forward I-V characteristic. The value of<tex>R</tex>is then used to plot the curve ln (<tex>I</tex>) versus<tex>V_{D} (= V - IR)</tex>which becomes a straight line even if ln<tex>(I)</tex>versus<tex>V</tex>does not. The ideality factor<tex>n</tex>and the Schottky-barrier height<tex>\Phi_{B0}</tex>of the diode then follow from the standard procedure. The main advantages of the methods… CONTINUE READING

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