An improved empirical large-signal model for high-power GaN HEMTs including self-heating and charge-trapping effects

@article{Yuk2009AnIE,
  title={An improved empirical large-signal model for high-power GaN HEMTs including self-heating and charge-trapping effects},
  author={Kelvin Yuk and G. R. Branner and David McQuate},
  journal={2009 IEEE MTT-S International Microwave Symposium Digest},
  year={2009},
  pages={753-756}
}
A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new Ids formulation accurately predicts the asymmetric bell-shaped transconductance (gm) over a large drain-source bias range which is crucial in modeling high-power GaN HEMTs. A method of utilizing a combination of pulsed-gate (PGIV) and pulsed-gate-and-drain (PIV) IV measurements to characterize the dispersive behavior of GaN HEMT nonlinear Ids characteristics is… CONTINUE READING
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