An extremely miniaturized ultra wide band 10–67 GHz Power Splitter in 65 nm CMOS Technology

  title={An extremely miniaturized ultra wide band 10–67 GHz Power Splitter in 65 nm CMOS Technology},
  author={Mariano Ercoli and Daniela Dragomirescu and Robert Plana},
  journal={2012 IEEE/MTT-S International Microwave Symposium Digest},
An extremely compact power splitter based on a modified Wilkinson power divider is presented. The design optimization, based on the use of lumped component, yields state of the art RF performances and an unrivaled size reduction. The splitter is design to operate over 3 octaves (10 – 80 GHz) and measurements in the 10 – 67 GHz frequency range show an IL better then 0.8 dB, a power unbalance below 0.05 dB and isolation better than 10 dB starting from 35 GHz and which reaches a maximum of 27 dB… CONTINUE READING


Publications referenced by this paper.
Showing 1-8 of 8 references

A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS

2010 IEEE International Solid-State Circuits Conference - (ISSCC) • 2010
View 1 Excerpt

Accurate electromagnetic simulation and measurement of millimeter-wave inductors in bulk CMOS technology

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) • 2010
View 1 Excerpt

Siliconization of 60 GHz

IEEE Microwave Magazine • 2010
View 1 Excerpt

Miniature Four-Way and Two-Way 24 GHz Wilkinson Power Dividers in 0.13 $\mu$m CMOS

IEEE Microwave and Wireless Components Letters • 2007
View 2 Excerpts

On-Chip Millimeter-Wave Library Device - Scalable Wilkinson Power Divier/Combiner

2007 Proceedings 57th Electronic Components and Technology Conference • 2007

Similar Papers

Loading similar papers…