An experimentally verified IGBT model implemented in the Saber circuit simulator

  title={An experimentally verified IGBT model implemented in the Saber circuit simulator},
  author={Allen R. Hefner and D. M. Diebolt},
A physics-based insulated gate bipolar transistor (IGBT) model is implemented in the general-purpose circuit simulator Saber. The IGBT model includes all of the physical effects that have been shown to be important for describing IGBTs, and the model is valid for general external circuit conditions. The Saber IGBT model is evaluated for the range of static and dynamic conditions in which the device is intended to be operated, and the simulations compare well with experimental results for all of… 
Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor physics,
An Advance Physics-Based Sub-Circuit Model of IGBT
An advanced physics-based equivalent-circuit model of IGBT has been described featuring a high accuracy in predicting device electrical performance in real circuit applications. A SPICE Level 3 model
Parameter extraction for physics-based IGBT models by electrical measurements
The IGBT (insulated gate bipolar transistor) is becoming the power switch of choice for many power applications, since it offers a good compromise between on-state loss, switching loss, and ease of
IGBT Behavioral PSPICE Model
The tailing of the anode currents simulated by the behavioral model at a constant anode voltage-switching test are given, resulting in good agreement between the simulation and experimental results.
Compact modeling of advanced Si-IGBT for circuit design
A physics-based compact model of insulated-gate bipolar transistors (IGBTs) models is presented. The IGBT structure consisting of a MOSFET and a bipolar parts, has been developed to realize low power
A behavioral model of the IGBT for circuit simulation
  • J. Hsu, K. Ngo
  • Engineering
    Proceedings of PESC '95 - Power Electronics Specialist Conference
  • 1995
The configuration of the Hammerstein model, which includes a nonlinear static block followed by a linear dynamic block, is applied to model the dynamics of the insulated gate bipolar transistor
An electro-thermal SPICE model for Reverse Conducting IGBT: Simulation and experimental validation
  • M. Riccio, M. Tedesco, A. Irace
  • Engineering
    2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  • 2016
The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed approach is based on a quasi-2D formulation with the joint use of IGBT and PiN diode sub-circuits.
Physical CAD model for high-voltage IGBTs based on lumped-charge approach
A new insulated gate bipolar transistor (IGBT) model developed on a physical basis is presented. The Lumped-Charge method has been revised in order to point out a more general methodology for
Implementation of the NIST IGBT model based on ordinary differential equations
  • Niklaus Felderer, Min Luo
  • Engineering
    2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
  • 2015
Modeling the electrical behavior of insulated gate bipolar transistors (IGBTs) with ideal and instantaneous transitions allows a fast and efficient simulation of power electronic circuits at the


Device Models, Circuit Simulation, And Computer-controlled Measurements For The IGBT
  • A. Hefner
  • Engineering
    [Proceedings] 1990 IEEE Workshop on Computers in Power Electronics
  • 1990
The implementation of the recently dcvel- oped IGBT device model into a circuit simulation program is described. It is shown that the circuit simulation program rapidly and robustly simulates the
An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)
  • A. Hefner
  • Physics, Engineering
    20th Annual IEEE Power Electronics Specialists Conference
  • 1989
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is
Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)
  • A. Hefner
  • Engineering, Physics
    Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting
  • 1988
The device-circuit interactions of the IGBT for a series resistor-inductor load, both with and without a snubber, are simulated. An analytical model for the transient operation of the IGBT is used in
An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)
  • A. Hefner
  • Engineering
    21st Annual IEEE Conference on Power Electronics Specialists
  • 1990
The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage
Power MOSFETs: Theory and Applications
Principles of operation 1 - threshold voltage principles of operation 2 - static characteristics principles of operation 3: transient and high-frequency behavior fabrication and reliability
FET modeling for circuit simulation
Fet modeling for circuit simulation, a perfect book that comes from great author to share with you, offers the best experience and lesson to take, not only take, but also learn.
Modern Power Devices
Carrier Transport Physics. Breakdown Voltage. Power Junction Field-Effect Transistors. Power Field-Controlled Diodes. Power Metal-Oxide-Semiconductor Field Effect Transistors. Power MOS-Bipolar
Gowar, Power MOSFETs-Theory and Applications
  • New York: Wiley,
  • 1989