An experimental proof that resistance-switching memories are not memristors

@article{Kim2019AnEP,
  title={An experimental proof that resistance-switching memories are not memristors},
  author={Jewoo Kim and Yuriy V. Pershin and Ming Yin and Turin Datta and Massimiliano Di Ventra},
  journal={ArXiv},
  year={2019},
  volume={abs/1909.07238}
}
It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available… Expand

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