An empirical model for device degradation due to hot-carrier injection

@article{Takeda1983AnEM,
  title={An empirical model for device degradation due to hot-carrier injection},
  author={Eiji Takeda and Nobuo N. Suzuki},
  journal={IEEE Electron Device Letters},
  year={1983},
  volume={4},
  pages={111-113}
}
An empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented. Relationships between device degradation, drain voltage, and substrate current are clarified on the basis of experiments and modeling. The presented model makes it possible to predict the lifetime of submicron devices by determining a certain criterion, such as taking a Vthshift of 10 mV over ten years as being allowable. This could also provide quantitative guiding principles… CONTINUE READING
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