An electrically modifiable synapse array of resistive switching memory.

This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater… CONTINUE READING

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