An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC


In this paper, an investigation into the crystal structure of Al- and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high… (More)