An analysis on damage of light-emitting diodes reliability induced by electronic static discharge

@article{Nan2016AnAO,
  title={An analysis on damage of light-emitting diodes reliability induced by electronic static discharge},
  author={Tingting Nan and Piaopiao He and Luqiao Yin and Jianhua Zhang},
  journal={2016 17th International Conference on Electronic Packaging Technology (ICEPT)},
  year={2016},
  pages={1122-1126}
}
The influence of different degrees of high reverse-bias stress on high power light-emitting diodes (LEDs) was investigated based on the aging of LED devices under the stress of 85 °C / 85 % RH. GaN-based blue LEDs were respectively tested by negative Human-Body-Mode (HBM) electronic static discharge (ESD) at -1000 V, -2000 V, -3000 V, -4000 V and -5000 V… CONTINUE READING