An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

  title={An aluminium nitride light-emitting diode with a wavelength of 210 nanometres},
  author={Yoshitaka Taniyasu and Makoto Kasu and Toshiki Makimōto},
Compact high-efficiency ultraviolet solid-state light sources—such as light-emitting diodes (LEDs) and laser diodes—are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In… 

Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

This study offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate.

Present Status of Deep UV Nitride Light Emitters

Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid progress in material growth, device fabrication and packaging

A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

The realization of semiconductor laser diodes and light-emitting diodes that emit short-wavelength ultraviolet light is of considerable interest for a number of applications including

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal–insulator–semiconductor structures

Al-rich III–nitride-based deep-ultraviolet (UV) (275–320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N

AlGaN nanowire deep ultraviolet optoelectronics

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowire LEDs with emission wavelengths covering the UV-B/C bands, which is nearly ten times higher compared to high quality planar AlN.

Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

III-nitride based ultraviolet (UV) light emitting diodes (LEDs) are of considerable interest in replacing gas lasers and mercury lamps for numerous applications. Specifically, AlGaN quantum well (QW)

Ultraviolet light-emitting diodes based on group three nitrides

Light-emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. For devices operating at shorter wavelengths, alloy compositions with a greater

Elements of AlGaN-Based Light Emitters

The III-nitrides have enabled a range of optoelectronic devices and associated applications of great industrial and societal importance. However, the full potential of the III-nitrides remains to be



250nmAlGaN light-emitting diodes

We report AlGaN deep ultraviolet light-emitting diodes (LEDs) at 250 and 255nm that have short emission wavelengths. For an unpackaged 200×200μm square geometry LED emitting at 255nm, we measured a

Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from wide-band-gap

Nitride-based semiconductors for blue and green light-emitting devices

Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue

AlGaN/GaN quantum well ultraviolet light emitting diodes

We report on the growth and characterization of ultraviolet GaN quantum well light emitting diodes. The room-temperature electroluminescence emission was peaked at 353.6 nm with a narrow linewidth of

Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Recent development of technology and understanding of the growth mechanism in heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow high-quality GaN, AlGaN, GaInN

Ultraviolet Emission from a Diamond pn Junction

The realization of an ultraviolet light–emitting diode with the use of a diamond pn junction was reported, and at forward bias of about 20 volts strong ultraviolet light emission at 235 nanometers was observed and was attributed to free exciton recombination.

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Superbright green InGaN single quantum well (SQW) structure light-emitting diodes (LEDs) with a luminous intensity of 12 cd were fabricated. The luminous intensity of these green InGaN SQW LEDs (12

Solid-State Light Sources Getting Smart

The high efficiency of solid-state sources already provides energy savings and environmental benefits in a number of applications, but these sources also offer controllability of their spectral power distribution, spatial distribution, color temperature, temporal modulation, and polarization properties.

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

Mg-doped AlN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates. Deep UV picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the

Band structure and fundamental optical transitions in wurtzite AlN

With a recently developed unique deep ultraviolet picoseconds time-resolved photoluminescence (PL) spectroscopy system and improved growth technique, we are able to determine the detailed band