An advanced flash memory technology on SOI

  title={An advanced flash memory technology on SOI},
  author={David Burnett and Danny Shum and Keith Baker},
  journal={International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)},
For the first time, EEPROM functionality is demonstrated on double-poly bitcells on SOI using the same layout as standard bulk CMOS bitcells. By using FN tunneling for program and erase (P/E) operations, the P/E characteristics of the floating-body SOI bitcell are comparable to the bulk CMOS characteristics. Bitcell endurance for SOI cells show significantly less window closure than bulk CMOS cells. High-voltage SOI device characteristics are also compared with bulk devices. With sufficient… CONTINUE READING


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