An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions

Abstract

A laterally diffused metal-oxide-semiconductor transistor (LDMOST) with ultralow specific ON-resistance (Rsp) is studied. In the OFF-state, the split p-type gate is depleted to achieve charge compensation with the n-type drift region, allowing a high n-drift doping. In the ON-state, holes accumulate in the split p-gate because the gate voltage (VG) applied… (More)

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