An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET

@article{Wang2015AnOS,
  title={An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET},
  author={Ying Wang and Kai Tian and Yue Hao and Cheng-Hao Yu and Yan-juan Liu},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={2774-2778}
}
In this paper, an optimized structure of 4H-SiC U-shaped trench gate MOSFET (UMOSFET) with low resistance is proposed. The optimized structure adds an n-type region, wrapping the p+ shielding region incorporated at the bottom of the trench gate. The depletion region formed by the p+ shielding region reduces greatly for the high dopant concentration of the added region. This added region also conducts electrons downward and expands the electrons to the bottom of the p+ shielding region. We… CONTINUE READING

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