An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS

@article{Roth2007AnOI,
  title={An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS},
  author={J E Roth and Samuel Palermo and N. Helman and D B Bour and D. A. B. Miller and Moshe Horowitz},
  journal={Journal of Lightwave Technology},
  year={2007},
  volume={25},
  pages={3739-3747}
}
A low-voltage, 90-nm CMOS optical interconnect transceiver operating at 1550-nm optical wavelength is presented. This is the first demonstration of a novel optoelectronic modulator architecture (the quasi-waveguide angled-facet electroabsorption modulator) in a system. It features a simple electronic packaging via flip-chip bonding to silicon. Devices have a broad optical bandwidth, are arrayed two dimensionally, and feature surface normal, spatially separated, and misalignment-tolerant optical… CONTINUE READING

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