An MOS Transistor Model for Analog Circuit Design

@inproceedings{Cunha1999AnMT,
  title={An MOS Transistor Model for Analog Circuit Design},
  author={Ana Isabela Ara{\'u}jo Cunha and M{\'a}rcio C. Schneider and Carlos Galup-Montoro},
  year={1999}
}
This paper presents a physically based model for the metal–oxide–semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are… CONTINUE READING
Highly Influential
This paper has highly influenced 25 other papers. REVIEW HIGHLY INFLUENTIAL CITATIONS
Highly Cited
This paper has 251 citations. REVIEW CITATIONS
154 Citations
8 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 154 extracted citations

251 Citations

01020'99'03'08'13'18
Citations per Year
Semantic Scholar estimates that this publication has 251 citations based on the available data.

See our FAQ for additional information.

References

Publications referenced by this paper.
Showing 1-8 of 8 references

An analytical MOS transistor model valid in all regions of operation and dedicated to lowvoltage and low-current applications

  • C. C. Enz, F. Krummenacher, E. A. Vittoz
  • Analog Integrated Circuits Signal Process.,vol. 8…
  • 1995
Highly Influential
9 Excerpts

Operation and Modeling of the MOS Transistor

  • Y. Tsividis
  • New York: McGraw-Hill,
  • 1987
Highly Influential
8 Excerpts

An explicit physical model for the long-channel MOS transistor including smallsignal parameters

  • A.I.A. Cunha, M. C. Schneider, C. Galup-Montoro
  • Solid-State Electron., vol. 38, no. 11, pp. 1945…
  • 1945
Highly Influential
10 Excerpts

MOSFET modeling for analog circuit CAD: Problems and prospects

  • Y. P. Tsividis, K. Suyama
  • IEEE J. Solid-State Circuits, vol. 29, pp. 210…
  • 1994
1 Excerpt

Micropower techniques

  • E. A. Vittoz
  • inDesign of MOS VLSI Circuits for…
  • 1994
1 Excerpt

On the small-signal behavior of the MOS transistor in quasistatic operation

  • C. Turchetti, G. Masetti, Y. Tsividis
  • Solid-State Electron., vol. 26, no. 10, pp. 941…
  • 1983
2 Excerpts

A simple and accurate approximation to the highfrequency characteristics of insulated-gate field-effect transistors

  • J. A. Van Nielen
  • Solid- State Electron.,vol. 12, pp. 826–829, 1969…
  • 1969
2 Excerpts

Similar Papers

Loading similar papers…