An MOS Transistor Model for Analog Circuit Design

  title={An MOS Transistor Model for Analog Circuit Design},
  author={Ana Isabela Ara{\'u}jo Cunha and M{\'a}rcio C. Schneider and Carlos Galup-Montoro},
This paper presents a physically based model for the metal–oxide–semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are… CONTINUE READING
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