An Investigation into the Parasitic Effects Affecting the Operation of HEMT-based ICs

Abstract

A study of the parasitic effects pentalizing the operation of two-dimensional electron gas field effect transistors (HEMTs) has been carried-out. In this paper, we present the results - experimental characterizations together with modellinig - obtained for two major process-dependent parasitics: kink effect and beckgatinig effect. 

Topics

2 Figures and Tables