An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs

@article{Badami2016AnIS,
  title={An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs},
  author={O. Badami and Enrico Caruso and Daniel Lizzit and Patrik Osgnach and David Esseni and Pierpaolo Palestri and Luca Selmi},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={2306-2312}
}
This paper reports about the implementation in a multisubband Monte Carlo device simulator of a comprehensive surface roughness scattering model, based on a nonlinear relation between the scattering matrix elements and the fluctuations Δ(r) of the interface position. The model is first extended by including carrier screening effects and accounting for scattering at multiple interfaces, and it is then used for the analysis of relevant experimental data sets. We show that the new model can… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-10 of 39 references

A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors

D. Lizzit, D. Esseni, P. Palestri, L. Selmi
J. Appl. Phys., vol. 116, no. 22, p. 223702, 2014. • 2014
View 10 Excerpts
Highly Influenced

Electron mobility enhancement of extremely thin body In0.7Ga0.3As-on-insulator metal–oxide–semiconductor field-effect transistors on Si substrates by metal–oxide–semiconductor interface buffer layers

S. Kim
Appl. Phys. Exp., vol. 5, no. 1, p. 014201, 2011. • 2011
View 4 Excerpts
Highly Influenced

High performance extremely thin body InGaAs-oninsulator metal–oxide–semiconductor field-effect transistors on Si substrates with Ni–InGaAs metal source/drain

S. Kim
Appl. Phys. Exp., vol. 4, no. 11, p. 114201, 2011. • 2011
View 4 Excerpts
Highly Influenced

Nanoscale MOS Transistors: Semi-Classical Transport and Applications, 1st ed

D. Esseni, P. Palestri, L. Selmi
2011
View 8 Excerpts
Highly Influenced

Consistent low-field mobility modeling for advanced MOS devices

Z. Stanojević
Solid-State Electron., vol. 112, pp. 37–45, Oct. 2015. • 2015
View 1 Excerpt

Improved surface roughness modeling and mobility projections in thin film MOSFETs

2015 45th European Solid State Device Research Conference (ESSDERC) • 2015
View 2 Excerpts

The impact of interface states on the mobility and drive current of In0.53Ga0.47AsIn0.53Ga0.47As semiconductor n-MOSFETs

P. Osgnach, E. Caruso, +3 authors L. Selmi
Solid- State Electron., vol. 108, pp. 90–96, Jun. 2015. • 2015
View 2 Excerpts

Similar Papers

Loading similar papers…