An Improved Model for GaAs MESFETs Suitable for a Wide Bias Range

@article{Harnal2007AnIM,
  title={An Improved Model for GaAs MESFETs Suitable for a Wide Bias Range},
  author={Hitesh Harnal and Ananjan Basu and S. K. Koul and R. K. Khatri and H. P. Vyas and Anjani Kumar},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2007},
  volume={17},
  pages={52-54}
}
In this letter, we present a new large signal model for GaAs metal-semiconductor field effect transistors, incorporating features for enhancing the bias range for which accuracy is maintained, for use in the simulation of microwave circuits. The model parameters for a specific case were extracted from a wide range of dc I-V and S-parameter data, and the simulated behavior was observed to match the measured data closely. The model includes the possibility of showing negative slopes of the I-V… CONTINUE READING

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