An ISFET design methodology incorporating CMOS passivation

@article{Sohbati2012AnID,
  title={An ISFET design methodology incorporating CMOS passivation},
  author={Mohammadreza Sohbati and Yan Liu and Pantelis Georgiou and Christofer Toumazou},
  journal={2012 IEEE Biomedical Circuits and Systems Conference (BioCAS)},
  year={2012},
  pages={65-68}
}
This paper presents a novel methodology for designing CMOS based Ion-sensitive Field-effect Transistors (ISFETs) taking into account the effects of passivation layer degradation. This allows more efficient implementation as well known challenges such as drift, threshold voltage variation, noise and dynamic range can be optimised through this methodology. By introducing a new term representing the influence of both chemical and electrical ISFET device dimensions, a more complete formulation is… CONTINUE READING