An IGBT gate driver IC with collector current sensing

Abstract

In this paper, an IGBT gate driver IC with a collector current sensing circuit and an on-chip CPU for digital control is presented. The IC is fabricated using TSMC's 0.18 μm BCD Gen-2 process. This technique is based on the unique Miller plateau relationship between the gate current and collector current (Ig and IC) for a particular gate resistance (Rg… (More)

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