An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors

@article{Kim2020AnEP,
  title={An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors},
  author={J. Kim and Yuriy V. Pershin and Ming Yin and Turin Datta and Massimiliano Di Ventra},
  journal={Advanced Electronic Materials},
  year={2020},
  volume={6}
}
It has been suggested that all resistive‐switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed to determine whether a given physical system is indeed a memristor or not. Here, such a test is experimentally applied to both in‐house fabricated Cu‐SiO2 and commercially available electrochemical metallization cells. The results… 
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