# An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors

@article{Kim2020AnEP, title={An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors}, author={J. Kim and Yuriy V. Pershin and Ming Yin and Turin Datta and Massimiliano Di Ventra}, journal={Advanced Electronic Materials}, year={2020}, volume={6} }

It has been suggested that all resistive‐switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed to determine whether a given physical system is indeed a memristor or not. Here, such a test is experimentally applied to both in‐house fabricated Cu‐SiO2 and commercially available electrochemical metallization cells. The results…

## 18 Citations

An experimental demonstration of the memristor test

- PhysicsPhysica E: Low-dimensional Systems and Nanostructures
- 2022

Probabilistic Memristive Networks - Part I: Application of a Master Equation to Networks of Binary ReRAM cells

- Computer ScienceArXiv
- 2020

This paper uses, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors and results are supplemented by results of numerical simulations that extend the findings beyond the case of identical Memristors.

Ideal memcapacitors and meminductors are overunity devices

- EngineeringScientific reports
- 2020

It is rigorously proved that ideal memcapacitors and meminductors are not passive or cyclo-passive devices, and that there exist excitation profiles that allow to extract more energy from the device than it is supplied with.

Probabilistic Resistive Switching Device Modeling Based on Markov Jump Processes

- Computer ScienceIEEE Access
- 2021

The mathematical formulation of memristor and Markov jump processes are combined and, by using the notion of master equations for finite-states, the inherent probabilistic time-evolution of RS devices is sufficiently modeled.

Reply to arXiv: 2102.11963, An experimental demonstration of the memristor test, Y. V. Pershin, J. Kim, T. Datta, M. Di Ventra, 23 Feb 2021. Does an ideal memristor truly exist?

- ChemistryArXiv
- 2021

A prototype device is developed and experimentally demonstrated that the direct q-φ interaction could be memristive, as predicted by Chua in 1971, and meets three criteria for an ideal memristor: a single-valued, nonlinear, continuously differentiable, and strictly monotonically increasing constitutive φ-q curve.

Antimonotonicity, Hysteresis and Coexisting Attractors in a Shinriki Circuit with a Physical Memristor as a Nonlinear Resistor

- PhysicsElectronics
- 2022

A novel approach to the physical memristor’s behavior of the KNOWM is presented in this work. The KNOWM’s memristor’s intrinsic feature encourages its use as a nonlinear resistor in chaotic circuits.…

Toward Reflective Spiking Neural Networks Exploiting Memristive Devices

- Computer ScienceFrontiers in Computational Neuroscience
- 2022

This study forecast that spiking neural networks (SNNs) can achieve the next qualitative leap and predicts that Reflective SNNs may take advantage of their intrinsic dynamics and mimic complex, not reflex-based, brain actions.

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

- ChemistryScience
- 2022

Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be…

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.

- Materials ScienceACS applied materials & interfaces
- 2022

Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process…

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