An Experimental Evaluation of SiC Switches in Soft-Switching Converters

@article{Ranstad2014AnEE,
  title={An Experimental Evaluation of SiC Switches in Soft-Switching Converters},
  author={Per Ranstad and Hans-Peter Nee and Jorgen Linner and Dimosthenis Peftitsis},
  journal={IEEE Transactions on Power Electronics},
  year={2014},
  volume={29},
  pages={2527-2538}
}
Soft-switching converters equipped with insulated gate bipolar transistors (IGBTs) in silicon (Si) have to be dimensioned with respect to additional losses due to the dynamic conduction losses originating from the conductivity modulation lag. Replacing the IGBTs with emerging silicon carbide (SiC) transistors could reduce not only the dynamic conduction losses but also other loss components of the IGBTs. In the present paper, therefore, several types of SiC transistors are compared to a state… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-10 OF 30 CITATIONS

References

Publications referenced by this paper.
SHOWING 1-10 OF 36 REFERENCES

Recent advances in VJFETs at SemiSouth

  • K. Chatty, D. C. Sheridan, V. Bondarenko, R. Schrader, K. Speer, J. B. Casady
  • ECS Trans., vol. 50, no. 3, pp. 53–63, .
  • 2012
Highly Influential
3 Excerpts

Similar Papers

Loading similar papers…