An Excellent Gain Flatness 3.0–7.0 GHz CMOS PA for UWB Applications

@article{Murad2010AnEG,
  title={An Excellent Gain Flatness 3.0–7.0 GHz CMOS PA for UWB Applications},
  author={S. A. Z. Murad and R. K. Pokharel and A. I. A. Galal and Rohana Sapawi and Haruichi Kanaya and Keiji Yoshida},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2010},
  volume={20},
  pages={510-512}
}
This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement… CONTINUE READING
Highly Cited
This paper has 29 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 21 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 10 references

A high-performance wideband CMOS low-noise amplifier using inductive series and parallel peaking techniques

  • J.-H. Lee, C.-C. Chen, Y.-S. Lin
  • Microwave and Optical Technolgy Letter, vol. 50…
  • 2008
2 Excerpts

Microwave engineering Europe

  • D. Nicholson, H.-S. Lee
  • pp. 40–46, [Online]. Available: [Online…
  • 2006
1 Excerpt

Similar Papers

Loading similar papers…