An Excellent Gain Flatness 3.0–7.0 GHz CMOS PA for UWB Applications

  title={An Excellent Gain Flatness 3.0–7.0 GHz CMOS PA for UWB Applications},
  author={S. A. Z. Murad and R. K. Pokharel and A. I. A. Galal and Rohana Sapawi and Haruichi Kanaya and Keiji Yoshida},
  journal={IEEE Microwave and Wireless Components Letters},
This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement… CONTINUE READING
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