An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

@article{Wang2014AnEM,
  title={An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects},
  author={Changsi Wang and Yuehang Xu and Xuming Yu and Chunjiang Ren and Zhensheng Wang and Haiyan Lu and Tangsheng Chen and Bin Zhang and Ruimin Xu},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2014},
  volume={62},
  pages={2878-2887}
}
Accurate modeling of electrothermal effects of GaN electronic devices is critical for reliability design and assessment. In this paper, an electrothermal model for large signal equivalent circuit modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects is presented. To accurately describe the effect of ambient temperature, two separate electrothermal networks (Idiss, Rdiss, and Cdiss for self-heating, and Iamb, Ramb, and Camb for ambient temperature effect) are used to… CONTINUE READING
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