An Electronically Tunable Linear or Nonlinear MOS Resistor

@article{Wee2008AnET,
  title={An Electronically Tunable Linear or Nonlinear MOS Resistor},
  author={Keng Hoong Wee and Rahul Sarpeshkar},
  journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
  year={2008},
  volume={55},
  pages={2573-2583}
}
We present a bidirectional MOS resistor circuit that is electronically tunable and has zero dc offset. For a given I-V characteristic, the circuit senses the source-to-drain potential across an MOS device and automatically generates an appropriate bias for the gate terminal to implement the characteristic via negative feedback. We show that the I-V characteristic of the resistor can be designed to be linear, compressive or expansive by using appropriate translinear current mode circuits for the… CONTINUE READING
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