An E-Band Power Amplifier With Broadband Parallel-Series Power Combiner in 40-nm CMOS

@article{Zhao2015AnEP,
  title={An E-Band Power Amplifier With Broadband Parallel-Series Power Combiner in 40-nm CMOS},
  author={Dixian Zhao and Patrick Reynaert},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2015},
  volume={63},
  pages={683-690}
}
This paper describes a fully integrated E-band power amplifier (PA) in 40-nm CMOS. The design and layout of the unit PA stage is optimized to achieve high output power while maintaining high power gain. A broadband parallel-series power combiner is proposed to provide the PA stage optimum load impedance across the complete E-band. The complete PA achieves a measured saturated output power of 20.9 dBm with more than 15-GHz small-signal -3-dB bandwidth and 22% power-added efficiency (PAE) at 0.9… CONTINUE READING

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