An Analytical Thermal Noise Model of deep submicron MOSFET's for Circuit Simulation with Emphasis on the BSIM3v3 SPICE Model

@article{Klein1998AnAT,
  title={An Analytical Thermal Noise Model of deep submicron MOSFET's for Circuit Simulation with Emphasis on the BSIM3v3 SPICE Model},
  author={Peter Klein},
  journal={28th European Solid-State Device Research Conference},
  year={1998},
  pages={460-463}
}
  • Peter Klein
  • Published 1998 in
    28th European Solid-State Device Research…
An analytical model for circuit simulation to describe the thermal noise in MOSFErs -for all channel length down to deep submicron is presented. Contrary to the thermal equilibrium assumption, this model includes the influence of the increasing electrical field with downscaling on the electron (hole) equivalent noise temperature. If not taken into account simulation errors of up to one order of magnitude in the thermal noise of half micron transistors are possible.