An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Transistor for Low Power Applications

@inproceedings{Samuel2013AnAM,
  title={An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Transistor for Low Power Applications},
  author={T. S. Arun Samuel and N. B. Balamurugan},
  year={2013}
}
In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-10 of 26 references

Padmapriyaa, “Analytical modelling and simulation of single-gate SOI TFET for low-power applications

  • T. S. Arun Samuel, N. B. Balamurugana, S. Bhuvaneswari, K. D. Sharmilaa
  • International Journal of Electronics, Published…
  • 2013
3 Excerpts

Assessment of ambipolar behaviour of a tunnel FET and Influence of Structural Modifications

  • Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta
  • Journal of Semiconductor Technology and Science,
  • 2012
1 Excerpt

Ohoka, "Modeling and Design of Ferroelectric MOSFETs

  • Han-Ping Chen, Vincent C. Lee, Atsushi
  • IEEE Trans. Electron Devices,
  • 2011
1 Excerpt

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