An Analytical Model of Short-Channel Effect for Metal–Oxide–Semiconductor Field-Effect Transistor with Insulated Shallow Extension

@inproceedings{Shih2004AnAM,
  title={An Analytical Model of Short-Channel Effect for Metal–Oxide–Semiconductor Field-Effect Transistor with Insulated Shallow Extension},
  author={Chun-Hsing Shih and Yi-Min Chen and Chenhsin Lien},
  year={2004}
}
In this paper, we present an analytical short-channel threshold voltage model without any fitting parameter for the metal–oxide–semiconductor field-effect Transistor (MOSFET) with insulated shallow extension (ISE). Excellent agreements between the numerical simulated results and this model are obtained. Very good suppression of the short-channel effect is observed for this ISE MOSFET. Both the sidewall-oxide thickness and shallow-extension depth play a major role in containing the short-channel… CONTINUE READING