An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET and Analysis of effect of Traps and Oxide charges on Fringing Capacitance

@inproceedings{Bhowmick2012AnAM,
  title={An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET and Analysis of effect of Traps and Oxide charges on Fringing Capacitance},
  author={Brinda Bhowmick and Srimanta Baishya},
  year={2012}
}
In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also… CONTINUE READING