An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

@article{Anderson2009AnAA,
  title={An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching},
  author={T. J. Anderson and Marko Jak Tadjer and Mario Alberto Mastro and Jennifer Kristine Hite and Karl D. Hobart and Charles Robert Eddy and F. J. Kub},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={1251-1253}
}
A novel device structure incorporating an ultrathin AlGaN barrier layer capped by an AlN layer in the source-drain access regions has been implemented to reliably control threshold voltage in AlGaN/GaN high-electron-mobility transistors. A recessed-gate structure has been used to decrease 2-D electron gas (2DEG) density under the gate, thus controlling threshold voltage while maintaining low on-resistance and high current density. The structure presented in this letter implements an ultrathin… CONTINUE READING

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