An AlGaAs double-heterojunction bipolar transistor grown by molecular-beam epitaxy

Abstract

To study AlGaAs p-n heterojunctions and optical and transport properties of electrically injected minority carriers (electrons) in p-A1,,,Gac,5 As, we have tested the performance of Ab,,Gao,4As/Alo.25Ga,,~ As/Ale6Gac.,As NpN double-heterojunction bipolar transistors ( DHBTs). The transistors exhibited a common emitter current gain (fi) as high as 400 at a… (More)

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