An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

@article{AguirreMorales2015AnAP,
  title={An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs},
  author={Jorge-Daniel Aguirre-Morales and S{\'e}bastien Fr{\'e}gon{\`e}se and Chhandak Mukherjee and Cristell Maneux and Thomas Zimmer},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={4333-4339}
}
In this paper, an accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature. 

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