An Accurate Behavioral Model for RF MOSFET Linearity Analysis

@article{Kwon2007AnAB,
  title={An Accurate Behavioral Model for RF MOSFET Linearity Analysis},
  author={Ickjin Kwon and Kwyro Lee},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2007},
  volume={17},
  pages={897-899}
}
This article describes a simple and accurate behavioral model of the radio frequency metal oxide semiconductor field effect transistor (RF MOSFET) to accurately describe the higher-order derivatives of the transconductance of the RF MOSFET using short channel I-V equation based on unified charge control model and improved mobility model. Based on this model, a simple procedure for extracting the model parameters from the measured data is proposed and implemented. The extracted results are… CONTINUE READING

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