An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications

@article{Bethoux2006An8F,
  title={An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications},
  author={J.-M. Bethoux and Henri Happy and Gilles Dambrine and V. Derycke and Marcello Goffman and Jean P. Bourgoin},
  journal={IEEE Electron Device Letters},
  year={2006},
  volume={27},
  pages={681-683}
}
In this letter, the authors report on the high-frequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of single-wall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21| 2) cutoff frequency (ft) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based… CONTINUE READING
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