An 0.8 µm 256K BiCMOS SRAM technology

@article{Havemann1987An0,
  title={An 0.8 µm 256K BiCMOS SRAM technology},
  author={R. Havemann and R. E. Eklund and R. A. Haken and D. B. Scott and H. Tran and P. K. Fung and T. E. Ham and D. Favreau and R. L. Virkus},
  journal={1987 International Electron Devices Meeting},
  year={1987},
  pages={841-843}
}
  • R. Havemann, R. E. Eklund, +6 authors R.L. Virkus
  • Published 1987
  • Physics
  • 1987 International Electron Devices Meeting
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