An 0.8 µm 256K BiCMOS SRAM technology

@article{Havemann1987An0,
  title={An 0.8 \&\#181;m 256K BiCMOS SRAM technology},
  author={Robert H. Havemann and R. E. Eklund and Roger A. Haken and David B. Scott and Hiep V. Tran and P. Kuen Fung and T. E. Ham and David Paul Favreau and Robert Virkus},
  journal={1987 International Electron Devices Meeting},
  year={1987},
  pages={841-843}
}

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