Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

@article{Kanoh1990AmorphoussiliconsiliconnitrideTT,
  title={Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method},
  author={H. Kanoh and O. Sugiura and P. A. Breddels and Manabu Matsumura},
  journal={IEEE Electron Device Letters},
  year={1990},
  volume={11},
  pages={258-260}
}
The application of chemical-vapor-deposited (CVD) amorphous-silicon and silicon-nitride films to active layers of thin-film transistors on a glass substrate is discussed. The maximum process temperature was 485 degrees C. The maximum field-effect mobility and the typical on-off current ratio were more than 0.9 cm/sup 2//V-s and 10/sup 6/, respectively. Advantages of applying the fully plasma-free CVD method in the amorphous-silicon thin-film transistor process are discussed.<<ETX>>