Ambipolar MoS2 thin flake transistors.

@article{Zhang2012AmbipolarMT,
  title={Ambipolar MoS2 thin flake transistors.},
  author={Yijin Zhang and Jianting Ye and Yusuke Matsuhashi and Yoshihiro Iwasa},
  journal={Nano letters},
  year={2012},
  volume={12 3},
  pages={1136-40}
}
Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS(2), a member of the transition metal dichalcogenides, an archetypal layered material. The EDLT of the thin flake MoS(2) unambiguously displayed ambipolar operation, in contrast to its commonly known bulk… CONTINUE READING
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