Aluminum oxide based nanostructures for impedance nanoelectronics

@article{Abramov2013AluminumOB,
  title={Aluminum oxide based nanostructures for impedance nanoelectronics},
  author={I. I. Abramov and H. V. Krylova and I. V. Lipnevich and T. I. Orekhovskaya},
  journal={2013 23rd International Crimean Conference "Microwave & Telecommunication Technology"},
  year={2013},
  pages={851-852}
}
Fluorescence and Raman light scattering in dielectric nanostructures based on aluminum oxide have been investigated. Ultrathin metal-containing conducting Langmuir-Blodgett films deposited on the anodic alumina shield the action of strong electrical fields and minimize electrical capacity of a near-electrode Helmholtz double electrically charged layer.