Alternating phase shifting mask in EUV lithography

Abstract

15 nm gate length in 35 nm node requires some resolution enhancement techniques in EUV lithography (EUVL). Alternating phase-shifting masks (Alt-PSMs) have demonstrated that narrow gate far below 0.6 of k/sub 1/ is available in optical lithography with sufficient flexibility to complex layout of gate layer. In EUVL, 15 nm gate length at NA 0.25 and 13.5 nm… (More)

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